
For starters, the memory is built on what is called a” III-V technology,” a class of semiconductor materials that are composed of elements from groups III and V of the periodic table, the company stated. These materials have unique properties that make them ideal for use in electronic devices such as transistors, LEDs, and solar cells.
Any technology that’s not pure silicon causes trouble when built on a standard silicon CMOS logic process. This has been one of the leading reasons why other attempts at high-speed non-volatile memory technologies like MRAM, ReRAM, PCM, and FRAM haven’t gotten off the ground, Handy said.
Handy notes the memory’s voltage of 2.6 volts Is orders of magnitude lower than the 20 volts required by NAND flash memory. That should translate into much lower electric bills and much longer life for the storage systems.
The news of successful manufacturing is an important step because it was the economies of scale that did in Optane, Handy said. “The wafer volume never ramped high enough to drive down the costs. There’s a chicken-and-egg problem that confronts any new technology as it vies to replace an established market leader, which Optane tried to do with DRAM. The volume needs to get high enough to drive down the cost, and the price must be low enough to grow the market volume. Intel tried to subsidize the ramp long enough to achieve this, but gave up after losing about $10 billion,” he said.